新闻

2020年6月1日

关于碳化硅MOSFET智能功率模块在Bodo的电源系统公司首席技术官会谈

本网站使用cookies。继续浏览该网站,即表明您同意我们使用Cookie的。

金宝搏188下载CISSOID处于领先地位高温半导体为要求苛刻的市场

With a focus on the Automotive Market we deliver solutions for efficient power conversion and compact motor drives: high voltage gate drivers for SiC & GaN transistors, Power Modules featuring low inductances and enhanced thermal performance, and automotive grade components rated at 175�C in excess of the AEC-Q100 Grade 0 qualification standard.
For the Aviation, Industrial & Oil & Gas Markets we provide solutions for harsh environment signal conditioning, motor control, timing and power supplies that provide reliable operation from -55�C to +225�C.

新金宝网址链接

汽车用集成电路

CISSOID has introduced CXT family of components designed and qualified for high-temperature automotive environments with operating junction temperature from -55�C up to +175�C (Tj), in excess of AEC-Q100 Grade 0 qualification standard: A 50mA adjustable linear voltage regulator and configurable devices enabling 13 logic functions.

阅读更多

碳化硅MOSFET栅极驱动器

Gate Driver boards optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125�C (Ta) and offering thermal headroom for the design of high density power converters in automotive and industrial applications. They enable high frequency (>100KHz) and fast SiC MOSFET's switching (dV/dt>50KV/�s), improving efficiency and reducing size and weight of the power converters.

阅读更多

碳化硅场效应晶体管

High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package and guaranteed from -55�C to +175�C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A.

阅读更多

188金宝搏亚洲

金宝搏188下载CISSOID推出了碳化硅MOSFET的一个新平台,智能功率模块设计用于汽车和工业电机驱动器。This new platform enables high power density converters giving access to the full benefits of SiC technology thanks to operation at high junction temperature (up to 175�C) and low switching losses.

阅读更多