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2020年6月1日

关于碳化硅MOSFET智能功率模块在Bodo的电源系统公司首席技术官会谈

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188金宝搏真人AG>新金宝网址链接>碳化硅MOSFET栅极驱动器

碳化硅MOSFET栅极驱动器

Gate Driver boards optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125�C (Ta) and offering thermal headroom for the design of high density power converters in automotive and industrial applications. They enable high frequency (>100KHz) and fast SiC MOSFET's switching (dV/dt>50KV/�s), improving efficiency and reducing size and weight of the power converters.