碳化硅MOSFET栅极驱动器

Gate Driver boards optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125�C (Ta) and offering thermal headroom for the design of high density power converters in automotive and industrial applications. They enable high frequency (>100KHz) and fast SiC MOSFET's switching (dV/dt>50KV/�s), improving efficiency and reducing size and weight of the power converters.